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Stress State Required for Pyramidal Dislocation Movement in Zinc

A tension or compression stress in such a direction that basal slip is minimized can produce second-order pyramidal slip bands in zinc single crystals. The stress required to initiate pyramidal dislocation motion is not sensitive to temperature. However, dislocation velocity at a given stress is sensitive to temperature and the very small dislocation velocity at low temperatures has lead to an erroneous estimate of a ``starting stress'' for pyramidal dislocations. Dislocation velocity at a constant temperature was found to be a function of the magnitude, but not the sense of the resolved shear stress

Twinning and Slip in Zinc by Indentation

Observations of twinning and slip deformation caused by indentation of zinc reveal that extensive slip on the basal and second-order pyramidal systems takes place at loads up to 5 kg. Prismatic punching through 1-cm crystals is observed at indentation loads in excess of about 2.5 kg. It is concluded that the stress at the tip of the twins cannot be obtained by use of an elastic stress analysis

Etching of High Purity Zinc

A method of etching high purity zinc to reveal various etch figures on {101¯0} planes is presented in this paper. Etch figures are formed by polishing in a dichromic acid solution after the introduction of mercury to the crystal surface. No measurable aging time is required to form etch figures at newly formed dislocation sites when mercury is on the surface prior to deformation. The mercury concentrates at the sites where etch figures form and may be removed by vacuum distillation and chemical polishing before it appreciably affects the purity of the bulk of the crystal

Dynamical x-ray diffraction from nonuniform crystalline films: Application to x-ray rocking curve analysis

A dynamical model for the general case of Bragg x-ray diffraction from arbitrarily thick nonuniform crystalline films is presented. The model incorporates depth-dependent strain and a spherically symmetric Gaussian distribution of randomly displaced atoms and can be applied to the rocking curve analysis of ion-damaged single crystals and strained layer superlattices. The analysis of x-ray rocking curves using this model provides detailed strain and damage depth distributions for ion-implanted or MeV-ion-bombarded crystals and layer thickness, and lattice strain distributions for epitaxial layers and superlattices. The computation time using the dynamical model is comparable to that using a kinematical model. We also present detailed strain and damage depth distributions in MeV-ion-bombarded GaAs(100) crystals. The perpendicular strain at the sample surface, measured as a function of ion-beam dose (D), nuclear stopping power (Sn), and electronic stopping power (Se) is shown to vary according to (1–kSe)DSn and saturate at high doses

Correlation of shock initiated and thermally initiated chemical reactions in a 1:1 atomic ratio nickel-silicon mixture

Shock initiated chemical reaction experiments have been performed on a 1:1 atomic ratio mixture of 20- to 45-µm nickel and –325 mesh crystalline silicon powders. It has been observed that no detectable or only minor surface reactions occur between the constituents until a thermal energy threshold is reached, above which the reaction goes to completion. The experiments show the energy difference between virtually no and full reaction is on the order of 5 percent. Differential scanning calorimetery (DSC) of statically pressed powders shows an exothermic reaction beginning at a temperature which decreases with decreasing porosity. Powder, shock compressed to just below the threshold energy, starts to react in the DSC at 621 °C while powder statically pressed to 23% porosity starts to react at about 30 °C higher. Tap density powder starts to react at 891 °C. The DSC reaction initiation temperature of the shock compressed but unreacted powder corresponds to a thermal energy in the powder of 382 J/g which agrees well with the thermal energy produced by a shock wave with the threshold energy (between 384 and 396 J/g). (Thermal energies referenced to 20 °C.) A sharp energy threshold and a direct correlation with DSC results indicates that the mean thermal energy determines whether or not the reaction will propagate in the elemental Ni+Si powder mixture rather than local, particle level conditions. From this it may be concluded that the reaction occurs on a time scale greater than the time constant for thermal diffusion into the particle interiors

Dislocations and etch figures in high purity zinc

A method of etching high purity zinc single crystals to reveal various etch figures on {1010} planes is presented in the preceding paper. The procedure involves the introduction of mercury to the crystal surface prior to a chemical polish with dichromic acid. The mercury was found to be concentrated at the etch figures. This paper presents the results of several experiments which support the conclusion that there exists a one-to-one correspondence between etch figures and dislocations. Some observations of slip on (0001) basal planes and {1212} pyramidal planes, and of twinning in zinc are also presented

Orientation Dependence of a Dislocation Etch for Zinc

The dislocation etch for (101-[bar]0] surfaces of zinc reported by Brandt, Adams, and Vreeland have been further explored. Additional surface orientations have been found where dislocation etching takes place. These orientations cover an area located between 3 degrees and 12.2 degrees to the [0001], and the area is symmetric about that axis. Attempts to produce dislocation etching on within 2 degrees of (0001) were generally unsuccessful. This is in contrast to etching of many crystals which takes place only within a few degrees of a low index plane

Dislocation Velocity on the {1212}〈1213〉Slip System of Zinc

Dislocation velocity on the {1212}〈1213〉slip systems of zinc monocrystals was deduced from the rate of growth of slip bands. Near 77°K dislocation velocity is directly proportional to stress, and screw dislocations move more rapidly than edge dislocations. The pre-exponential factor in a thermal activation model is the same for edge and screw dislocations, but the activation energy for edge dislocations (0.22eV) exceeds that for screws by 5%. It is postulated that the larger activation energy for edge dislocations is due to their dissociation in the basal plane. Near room temperature dislocation velocity decreases and cross-glide increases with increasing temperature. It is suggested that dragging dipoles are responsible for the decrease in dislocation velocity. Finally, it is shown that the temperature dependence of both the yield strength and the plastic modulus is similar to the temperature dependence of the stress required to produce a constant dislocation velocity